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Microwave Field Effect Transistor Theory, Design and Application

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Pengelly, Raymond S.

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Covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD
considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and
thermal considerations. Perhaps the most comprehensive text on GaAs FET technology and its practical application.
BACK COVER
This is the third edition of Microwave Field-Effect transistors written by Raymond S. Pengelly. It covers the use of MESFET devices in
microwave circuits, such as low-noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. This text is a classic
reference for all engineers involved in the development of solid state microwave devices.
TABLE OF CONTENTS
Preface
Foreword
Biography
1 Introduction
2 GaAs FET Theory-Small Signal
3 GaAs FET Theory-Power
4 Requirements and Fabrication of GaAs FETs
5 The Design of Transistor Amplifiers
6 FET Mixers
7 GaAs FET Oscillators
8 FET and IC Packaging
9 Novel FET Circuits
10 Gallium Arsenide integrated Circuits
11 Other III-V Materials and Devices
Index

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